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Nanomemory

This report analyzes the Global Market for Nanomemory in Millions of US$. The types of Nanomemory technologies discussed in the report include: Ferroelectric Random Access Memory or FRAM, Magnetoresitive Random Access Memory or MRAM, Ovonic Unified Memory, Holographic Memory, Nano-RAM or NRAM, Molecular Memory, and Polymer memory. Annual forecasts are provided for the period of 2010 through 2015. The report profiles 40 companies including many key and niche players worldwide such as Advanced Micro Devices, Inc., California Molecular Electronics Corporation, Cavendish Kinetics, Colossal Storage Corporation, Cypress Semiconductor Corporation, Everspin Technologies, Inc., Fujitsu Limited, Hewlett-Packard Development Company, L.P, Hitachi, Ltd., Honeywell International Inc., International Business Machines Corp., Infineon Technologies AG, Intel, Nanochip, Inc., Nanosys, Inc., Nantero, Inc., NVE Corporation, Ovonyx, Inc., Ramtron International Corporation, Samsung Electronics Co., Ltd., SanDisk Corporation, STMicroelectronics NV, Texas Instruments Inc., and ZettaCore, Inc. Market data and analytics are derived from primary and secondary research. Company profiles are mostly extracted from URL research and reported select online sources.
Published on: Mar 3, 2016
Published in: Business      Economy & Finance      
Source: www.slideshare.net


Transcripts - Nanomemory

  • 1. Find Industry reports, Company profilesReportLinker and Market Statistics >> Get this Report Now by email!NanomemoryPublished on July 2009 Report SummaryThis report analyzes the Global Market for Nanomemory in Millions of US$. The types of Nanomemory technologies discussed in thereport include: Ferroelectric Random Access Memory or FRAM, Magnetoresitive Random Access Memory or MRAM, Ovonic UnifiedMemory, Holographic Memory, Nano-RAM or NRAM, Molecular Memory, and Polymer memory. Annual forecasts are provided for theperiod of 2010 through 2015. The report profiles 40 companies including many key and niche players worldwide such as AdvancedMicro Devices, Inc., California Molecular Electronics Corporation, Cavendish Kinetics, Colossal Storage Corporation, CypressSemiconductor Corporation, Everspin Technologies, Inc., Fujitsu Limited, Hewlett-Packard Development Company, L.P, Hitachi, Ltd.,Honeywell International Inc., International Business Machines Corp., Infineon Technologies AG, Intel, Nanochip, Inc., Nanosys, Inc.,Nantero, Inc., NVE Corporation, Ovonyx, Inc., Ramtron International Corporation, Samsung Electronics Co., Ltd., SanDiskCorporation, STMicroelectronics NV, Texas Instruments Inc., and ZettaCore, Inc. Market data and analytics are derived from primaryand secondary research. Company profiles are mostly extracted from URL research and reported select online sources. Table of Content I. INTRODUCTION, METHODOLOGY & PRODUCT DEFINITIONS Study Reliability and Reporting Limitations I-1 Disclaimers I-2 Data Interpretation & Reporting Level I-3 Product Definitions and Scope of Study I-3II. EXECUTIVE SUMMARY 1. MARKET OVERVIEW II-1 Modern Day Storage Woes II-1 Nanomemory to the Rescue II-1 Table 1: World Long Term Projections for Nanomemory Market- Annual Sales Figures in US$ Billion for the Years 2010 through 2015 (includes corresponding Graph/Chart) II-2 Who Leads the Pack II-2 Conventional Vs Emerging Storage Options II-3 Comparison Between Traditional and Emerging Memory Types II-3 Nanotechnology to Alter Memory Storage in Electronics II-3 MRAM: Pros and Cons II-4 Whats in Store for MRAM II-4 Ovonic Memory Gathering Momentum II-4 Holographic Memory in Future II-5Nanomemory Page 1/7
  • 2. Find Industry reports, Company profilesReportLinker and Market Statistics R&D in Nanomemory: A Sneak Peak II-5 Carbon Nanotubes Based MemoryII-5 Nanodots II-5 Nanocrystalline Memory II-6 Nano-Ionic Memory II-6 Patent Protection Vital for Investment II-6 Table 2: Number of Patents Filed for Select Nanomemory Types from 2003 Onwards in the US, Japan, Europe, and WIPO (includes corresponding Graph/Chart) II-7 2. PRODUCT OVERVIEW II-8 Nanotechnology: Breaking Conventional Size Barriers II-8 Volatile and Non-Volatile Memory II-8 Nanomemory: An Introduction II-9 Select Nanomemory Types - Features, and Applications II-9 Comparison of Select Nanomemory Technologies- FRAM, MRAM, and Ovonic Unified Memory II-10 FRAM II-10 MRAM II-11 Ovonic Unified Memory II-11 Holographic Memory II-12 NRAM II-13 Molecular Memory II-13 Polymer Memory II-13 3. TECHNOLOGICAL DEVELOPMENTS II-15 Researchers Develop New Nanotube Flash Memory Design II-15 Researchers to Develop Graphene Memory II-15 Physicists Succeed in Controlling Electron Spin II-16 Chemists Develop New Method to Synthesize Nanorods and Nanowires II-16 Researchers Develop Nanowires to Store Data II-17 IBM Develops New Memory DeviceII-17 KAIST Develops 8nm NVM Flash Memory II-17 University of Southampton Develops Optical Memory Element II-18 Researchers Develop the Largest Memory Bit Array II-18 Physicists Develop Optical Memory Using Single Gallium Nanoparticle II-18 4. PRODUCT INNOVATIONS/INTRODUCTIONS II-19 Toshiba Unveils New 16-Gigabit Memory Chip II-19 Micron Launches 8-Gb SLC high speed NAND II-19 AMD Launches New Stream Processor, AMD FireStream 9250 II-19 AMD Introduces Two New Graphics Card with TeraFlops Graphics Chip II-20 AMD to Use GDDR5 Memory in New Advanced ATI Radeon Graphics Systems II-20 AMD Introduces New Graphics Accelerator, ATI FirePro V 8700 II-21 AMD Releases New Graphic Processor, ATI Radeon E2400 II-21 Hitachi Announces Nanotechnology Milestone for Hard Disk Drives Capacity II-22Nanomemory Page 2/7
  • 3. Find Industry reports, Company profilesReportLinker and Market Statistics Ramtrons New Integrated EDR Incorporates F-RAM Capabilities II-22 Ramtron Unveils New Serial F-RAM with 2Mb Memory II-23 Ramtron Unveils FM3135 II-24 Samsungs Sampling of Smallest-ever 2Gb DDR3 Utilizes 50nm Class Circuiting II-24 Samsungs New High-Performing Smart Card IC Utilizes 90nm Technology II-25 SanDisk Releases a New WORM Digital Memory Card for Data- Write-Protection II-26 SanDisks New Advanced Memory Stick PRO-HG Duo, Ideal for SLR cameras II-27 Everspin Includes Small Footprint and byte-wide BGA Products into MRAM family II-27 Infineon Technologies Launches X-GOLD102 II-28 Nanochip Unveils a Breakthrough Storage Technology II-28 Ramtron Unveils FM25V05, Serial 512-Kilobit F-RAM II-29 Ramtron Releases High-Speed FM28V100 II-29 Ramtron Releases FM25V10, Flexible 1-Megabit Serial F-RAM II-30 Ramtron Enhances Its Range of AEC-Q100-Specified F-RAM Memory Devices II-31 Samsung Introduces First 30nm Flash Memory in the World II-31 Virage Unveils New 65nm Product Lines II-31 RIC Launches 4Mb FRAM II-32 Samsung Launches 8GB Flash Memory II-33 Hewlett-Packard Launches Nanotechnology Based New Computer Chip II-33 Ramtron Unveils 4Mb Non-Volatile FRAM Memory II-33 Samsung Develops a New Chip for Digital TVs II-34 Samsung Launches 8GB moviNAND for Mobiles II-34 Samsung Launches 30nm Process Node Based Primary Flash Memory Chip II-34 Virage Expands the Range of Silicon Aware IP Line II-35 Toshiba Corp to Manufacture NAND Flash Memory Chips with 43nm Technology II-35 Impinj Releases AEON@OTP Nonvolatile Memory Cores II-35 Scientists in South Korea Create the Worlds First 8- nanometer Flash Memory Part II-36 Epson and Fujitsu Develop Next-Generation FRAM Technology II-36 Fujitsu Introduces Embedded FRAM for Digital Televisions II-36 Ramtron Extends Grade 1 Automotive Devices Product Range II-37 Ramtron Announces Expansion of +125ºC F-RAM-based Automotive Devices II-38 Ramtron Unveils a New 2Mb Parallel High-Density F-RAM memory device II-38 Ramtron Expands Versa 8051Series by Unveiling a 2 KB F-RAM Microcontroller II-39 Ramtron Expands Nonvolatile State Saver Line by Unveiling a 4-bit F-RAM Device II-39 Ramtron Expands F-RAM-based Grade 1 Automotive parts II-40 FRAM Memory from Ramtron Incorporated in Car Audio Platform by Daesung-Eltec II-41Nanomemory Page 3/7
  • 4. Find Industry reports, Company profilesReportLinker and Market Statistics Ramtron Announces Upgrading of Grade 1 Automotive line II-41 Ramtron Introduces Improved F-RAM-Enhanced Processor Companions II-42 Samsung Unveils GDDR5 Memory Chip Transfers data at Speeds of 6Gb/s II-42 Samsung Introduces 64Gb MLC NAND Flash Memory for High Density Storage II-43 Samsung Unveils 60nm 2Gb DDR2 DRAM Using Class Processing Technology II-43 Samsung Introduces a Multi-chip High-Density moviMCP Memory Package II-44 Samsung Commences Sampling of 16Gb NAND Flash Utilizing 50nm Processing Technology II-45 Hitachi and Renesas Launch Circuit Technology for On-Chip Nonvolatile Memory Applications II-45 Hitachi Launches 0.05mm x 0.05mm Contactless RFID IC Chip II-46 Infineon Unveils XE166 Family of Real-Time Signal Controllers II-46 Impinj Releases AEON® for Production in TSMC II-47 Ramtron and TI to Launch 4-Mbit FRAM II-47 5. RECENT INDUSTRY ACTIVITY II-48 Hynix to Acquire Stake in ProMOS II-48 Lockheed Martin Acquires Government Business Unit of Nantero II-48 BAE Systems and MAST to Develop Nano-Sensor Technology II-49 Qimonda Partners with Elpida II-49 SVTC Partners with Nantero II-49 Hynix Partners with Nanosys II-49 Qimonda AG in Partnership with Elpida Memory Inc. to Develop Nano-Chips II-50 Nantero Partners with SVTC Technologies to Develop Carbon Nanotube Process II-50 Aewin Technologies Enters into an Agreement with Ramtron II-50 Numonyx Commences Prototype Production of 45nm Wafers II-50 Hynix to Commence Production of 50nm DRAM II-51 SanDisk to Commence Production of MLC NAND Flash Memory II-51 Crocus Technology Raises Funds to Develop MRAM Technology II-51 Samsung and Sun Microsystems Collaborate on SLC Flash Memory Development II-51 ATMI and Ovonyx to Collaborate on High-Volume Manufacture of PCM Products II-52 SanDisk and Toshiba Co-Develop NAND Flash Memory II-52 Energy Optimizers Enters into an Agreement with Ramtron II-53 Freescale Forms New Company for MRAM Development II-54 Hynix Joins the Memory Technology Access Program (M-TAP) of Nanosys II-54 Toshiba Develops 16-Gigabit NAND Flash Memory II-55 Ramtron International Selects Shanghai Welltech for FM25L16 Designing II-55 AMD Partners with TSMC II-56 TSMC Announces Virage as IP Partner II-56 RIC Partners with TI II-56Nanomemory Page 4/7
  • 5. Find Industry reports, Company profilesReportLinker and Market Statistics Samsung and Toshiba Collaborate on Premium NAND Memory Chips II-57 Ovonyx and Hynix Collaborate on PCM Products Development II-57 Ovonyx and Qimonda Collaborate on PCRAM Technology II-58 IBM, Infineon, Freescale, Samsung & Chartered Cooperate on 32-nm Semiconductors II-58 Spansion Inks Agreement with TSMC II-59 AMD Enters into an Agreement with SAMSUNG II-59 Infineon Enters into an Agreement with IBM II-59 Toshiba to Manufacture 43nm NAND Flash Memory Chips II-59 Samsung Starts Production of 16-gigabit NAND Flash Memory II-60 Samsung Commences Production of 60nm DRAM Chips II-60 Intel Corp Receives Approval for New Computer Chip Plant II-60 NVE Corp to Receive New PatentII-60 Intel to Commence Mass Production of Alverstone II-60 National Semiconductor to Qualify Cavendish Kinetics Nanomech Process II-61 Samsung Commences Mass Production of NAND Flash Memory Chips II-61 6. FOCUS ON SELECT GLOBAL PLAYERS II-62 Advanced Micro Devices, Inc. (US) II-62 California Molecular Electronics Corporation (US) II-62 Cavendish Kinetics (US) II-62 Colossal Storage Corporation (US) II-63 Cypress Semiconductor Corporation (US) II-63 Everspin Technologies, Inc. (US) II-63 Fujitsu Limited (Japan) II-63 Hewlett-Packard Development Company, L.P. (US) II-64 Hitachi, Ltd. (Japan) II-64 Honeywell International Inc. (US) II-64 International Business Machines Corp. (US) II-65 Infineon Technologies AG (Germany) II-65 Intel (US) II-65 Nanochip, Inc. (US) II-66 Nanosys, Inc. (US) II-66 Nantero, Inc. (US) II-66 NVE Corporation (US) II-67 Ovonyx, Inc. (US) II-67 Ramtron International Corporation (US) II-67 Samsung Electronics Co., Ltd. (Korea) II-67 SanDisk Corporation (US) II-68 STMicroelectronics NV (Switzerland) II-68 Texas Instruments Inc (US) II-69 ZettaCore, Inc. (US) II-69III. COMPETITIVE LANDSCAPE Total Companies Profiled: 40Nanomemory Page 5/7
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  • 7. Find Industry reports, Company profilesReportLinker and Market Statistics Payment Information Please indicate the payment method, you would like to use by selecting the appropriate box. Payment by credit card Card Number: ______________________________________________ Expiry Date __________ / _________ CVV Number _____________________ Card Type (ex: Visa, Amex…) _________________________________ Payment by wire transfer Crédit Mutuel RIB : 10278 07314 00020257701 89 BIC : CMCIFR2A IBAN : FR76 1027 8073 1400 0202 5770 189 Payment by check UBIQUICK SAS 16 rue Grenette – 69002 LYON, FRANCE Customer signature:   Please note that by ordering from Reportlinker you are agreeing to our Terms and Conditions at http://www.reportlinker.com/index/terms Please fax this form to: Europe, Middle East and Africa : + 33 4 37 37 15 56 Asia, Oceania and America : + 1 (805) 617 17 93Nanomemory Page 7/7

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